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The present study estimated the influence of temperature on the band-gap energy in reduced graphene oxide (rGO) nanoplatelets obtained from bamboo. Individual rGO nanoplatelets were synthesized via double thermal decomposition (DTD) in a pyrolysis system under a controlled nitrogen atmosphere and carbonization temperature fixed at TCA = 973 K. For the electrical characterization of individual rGO nanoplatelets, the I-V curves method was used at four electrical contacts of Pt nano-wires grown by focused electron-ion beam induced deposition (FEBID) system. The influence of temperature on the band-gap energy (Eg(T)) was estimated via electrical resistivity measurements taken at different temperatures varying from 30 to 290 K. As regards the electrical properties, the rGO samples exhibited an electrical response at room temperature, acting as a narrow band-gap semiconductor with a band-gap energy value of 0.11 eV and an electrical response at low temperature described mainly by the Mott 3-dimensional variable range hopping (VRH-3D) model. The Eg(T) dependence was analyzed considering the Varshni, Bose-Einstein, Magnoogian-Wooley, Viña, et al., and Päsler phenomenological models. The Varshni model adequately described the Eg(T) behavior with extrapolated Eg(T = 0 K) value at 0.292 eV and Varshni parameters at α = 6.70 x 10-4 eV/K and β = 33.62 K. These values agree with the known order of magnitude of the Varshni coefficients reported for other narrow band-gap semiconductors such as InAs and InSb. Hydroxyl bridges on rGO were found modifying carbon-carbon bond length and controlling electrical responses, as previously reported when employing first-principle calculations via the density functional theory (DFT). These results suggest that individual rGO nanoplatelets can be excellent materials for developing advanced electronics for sensors and devices.
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