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Abstract
In the present work a theoretical analysis of the spin transport in a pseudo spin valve (PSV) heterostructure formed by two ferromagnetic (FM) separated by a semiconductor (SC) is performed. For the SC, the conduction band at the Γ point of the reciprocal space and the spin-orbit coupling (SOC) are considered; for the FM electrodes, the internal exchange energy (∆ j) and a spontaneous magnetization are taken into account. An analytical expression for the transmission probability as a function of the magnetization director vector (n j) was obtained. In addition, the tunneling magnetoresistance (TMR) at T = 0 K dependent on the SC thickness was calculated using the formula of Landauer B¨uttiker for a channel and it is observed that it obtains its maximum value when the direction nl (fixed) is parallel to the [0 1 0] axis. Moreover, when applying the proposed physicomathematical model to the Fe/SC/Fe PSV, with SC such as: GaAs, GaSb and InAs; it was observed that the SOC Dresselhaus does not contribute to the TMR.
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References
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