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Abstract
This paper reports the growth of diamond film deposited on crystalline silicon (111) through the HFCVD technique. Raman spectroscopy allows evaluating progressive degradation of the quality of the films due to the combined effect of methane concentration and the decrease in substrate temperature. The best quality films show an acute and narrow Raman peak with a FWHM of 8.07 cm-1, coincident in its 1332 cm-1 position to the peak of natural diamond. Characterization through AFM allows establishing fine quality criteria of the film according to the grain size and the roughness of the surface. AFM analysis of films grown in equal thermodynamic conditions reveals significant morphological differences. Diamond films deposited by HFCVD seem reproducible if Raman spectroscopy criteria are applied but present significant differences in the AFM resolution scale.
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