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- Jhon Jairo Prías-Barragán, Narly Andrea Echeverry-Montoya, Hernando Ariza-Calderón, Fabricación y caracterización de carbón activado y de nanoplaquetas de carbón a partir de Guadua angustifolia Kunth para aplicaciones en electrónica , Revista de la Academia Colombiana de Ciencias Exactas, Físicas y Naturales: Vol. 39 Núm. 153 (2015)
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Se estimó la dependencia de la temperatura con la energía de banda prohibida (Eg(T)) en nanoplaquetas individuales de grafeno oxidado reducido (rGO) obtenidas de bambú. Las rGO se sintetizaron mediante el método de la doble descomposición térmica en un sistema de pirolisis, bajo una atmósfera de nitrógeno controlada y temperatura de carbonización fija en TCA = 973 K. Para la caracterización eléctrica de las rGO se empleó el método de curvas I-V en cuatro contactos eléctricos con nanocables de Pt depositados mediante el sistema de deposición inducida por haces enfocados de electrones e iones. La Eg(T) se estimó usando medidas de resistividad eléctrica tomadas a temperaturas que variaban entre los 30 y los 290 K. Las rGO exhibieron una Eg(T) descrita principalmente por el modelo de Mott de salto de rango variable tridimensional (VRH-3D). La Eg(T) se analizó considerando los modelos fenomenológicos de Varshni, Bose-Einstein, Magnoogian-Wooley, Viña, et al., y Päsler. Se encontró que el modelo de Varshni describía adecuadamente el comportamiento experimental de la Eg(T), con el valor de Eg(T = 0 K) extrapolado a 0,292 eV y los parámetros de Varshni de α = 6,70 x 10-4 eV/K y β = 33,62 K. Estos valores concuerdan con el orden de magnitud de los coeficientes de Varshni reportados para otros semiconductores de banda prohibida estrecha como el InAs y el InSb. Asimismo, se encontró que la presencia de puentes de hidroxilo en la rGO modificaba la longitud de los enlaces carbono-carbono, lo cual domina la respuesta eléctrica, como se preveía y ha sido reportado previamente al emplear cálculos de primeros principios vía la teoría del funcional de la densidad (DFT). Estos resultados sugieren que las rGO pueden ser excelentes materiales para el desarrollo de la electrónica avanzada de sensores y dispositivos.
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