Computación neuromórfica con materiales cuánticos: de los aislantes de Mott a los dispositivos bioinspirados
PDF (Inglés)

Palabras clave

computación neuromórfica
aislante de Mott
transición metal-aislante
dióxido de vanadio
neuristor
sinaptor

Cómo citar

Ramírez, J. G., Prieto, P., Gómez, M. E., & Schuller , I. K. (2026). Computación neuromórfica con materiales cuánticos: de los aislantes de Mott a los dispositivos bioinspirados. Revista De La Academia Colombiana De Ciencias Exactas, Físicas Y Naturales. https://doi.org/10.18257/raccefyn.4169

Descargas

##plugins.themes.healthSciences.displayStats.noStats##

Societal impact


Resumen

Las crecientes demandas energéticas de la inteligencia artificial moderna han expuesto las limitaciones fundamentales de las arquitecturas de cómputo convencionales. La computación neuromórfica, que busca emular el procesamiento de información altamente paralelo y eficiente del cerebro, ofrece una alternativa convincente cuya realización ha requerido materiales que exhiban de forma natural el comportamiento no lineal, multiestado y adaptativo que caracteriza a las neuronas y las sinapsis biológicas. En esta revisión se plantea que los materiales con electrones fuertemente correlacionados, en particular los aislantes de Mott, proporcionan exactamente ese sustrato físico. Se presenta de manera accesible la física esencial de las transiciones metal-aislante en óxidos de vanadio (VO2, V2O3) y manganitas de perovskita, y se describe cómo su comportamiento de conmutación se traduce en primitivas neuromórficas: el neuristor (neurona artificial) y el sinaptor (sinapsis artificial). La revisión se apoya ampliamente en el trabajo experimental de los autores: la visualización directa de la coexistencia de fases nanotexturadas en V2O3; la técnica de huellas del MIT para la ingeniería de la conmutación resistiva multiestado en VO2; la demostración del disparo subumbral en nanodispositivos de Mott, y la memoria analógica multiestado controlada eléctricamente en manganitas con separación de fases. Se concluye con la presentación de los principales retos y las perspectivas más prometedoras para llevar estas demostraciones de laboratorio a su aplicación en sistemas prácticos de cómputo bioinspirado.

 

PDF (Inglés)

Referencias

Attwell, D., Laughlin, S. B. (2001) An energy budget for signaling in the grey matter of the brain. Journal of Cerebral Blood Flow & Metabolism, 21(10), 1133–1145. https://doi.org/10.1097/00004647-200110000-00001

Cao, J., Zhang, X., Cheng, H., Qiu, J., Liu, X., Wang, M., Liu, Q. (2022) Emerging dynamic memristors for neuromorphic reservoir computing. Nanoscale, 14, 289–298. https://doi.org/10.1039/D1NR06680C

Cardona-Rodríguez, A., Arango, I. C., Gomez, M. F., Dominguez, C., Trastoy, J., Urban, C., Sulekar, S., Nino, J. C., Schuller, I. K., Gomez, M. E. (2019) Resistive switching in multiferroic BiFeO3 films: Ferroelectricity versus vacancy migration. Solid State Communications, 288, 38–42. https://doi.org/10.1016/j.ssc.2018.11.005

Carranza-Celis, D., Cardona-Rodríguez, A., Narváez, J., Moscoso-Londoño, O., Muraca, D., Knobel, M., Ornelas-Soto, N., Reiber, A., Ramírez, J. G. (2019) Control of multiferroic properties in BiFeO3 nanoparticles. Scientific Reports, 9, 3182. https://doi.org/10.1038/s41598-019-39517-3

Carranza-Celis, D., Skoropata, E., Biswas, A., Fitzsimmons, M. R., Schuller, I. K., Ramirez, J. G. (2021) Magnetism dynamics driven by phase separation in pr-doped manganite thin films: A ferromagnetic resonance study. Physical Review Materials, 5(12). https://doi.org/10.1103/physrevmaterials.5.124413

Carranza-Celis, D., Salev, P., Basaran, A. C., Schuller, I. K., Ramírez, J. G. (2025) Electronic and magnetic memory enabled by phase separation [Manuscript in preparation].

Ceballos Medina, S., Marín Mercado, L., Cardona-Rodríguez, A., Quiñonez Penagos, M. F., Magén, C., Rodríguez, L. A., Ramírez, J. G. (2025) Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes. Physics Open, 22, 100249. https://doi.org/10.1016/j.physo.2024.100249

Cheng, S., Navarro, H., Wang, Z., Li, X., Kaur, J., Pofelski, A., Meng, Q., Zhou, C., Chen, C., Dean, M. P. M., Liu, M., Basaran, A. C., Rozenberg, M., Ong, S. P., Schuller, I. K., & Zhu, Y. (2025) Purely electronic insulator-metal transition in rutile vo2. Nature Communications, 16, 5444. https://doi.org/10.1038/s41467-025-6 0243-0

Corti, E., Cornejo Jimenez, J. A., Niang, K. M., Robertson, J., Moselund, K. E., Gotsmann, B., Ionescu, A. M., Karg, S. (2021) Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks. Frontiers in Neuroscience, 15, 628254. https://doi.org/10.3389/fnins.2021.628254

Corti, E., Gotsmann, B., Moselund, K., Stolichnov, I., Ionescu, A., Karg, S. (2018) Resistive coupled VO2 oscillators for image recognition. 2018 IEEE International Conference on Rebooting Computing (ICRC), 1–7. https://doi.org/10.1109/icrc.2018.8638626

Crane, H. D. (1962) Neuristor—a novel device and system concept. Proceedings of the IRE, 50(10), 2048–2060. https://doi.org/10.1109/JRPROC.1962.288130

Dagotto, E., Hotta, T., Moreo, A. (2001) Colossal magnetoresistant materials: The key role of phase separation. Physics Reports, 344(1–3), 1–153. https://doi.org/10.1016/S0370-1573(00)00121-6

Davies, M., Srinivasa, N., Lin, T.-H., Chinya, G., Cao, Y., Choday, S. H., Dimou, G., Joshi, P., Imam, N., Jain, S., Liao, Y., Lin, C.-K., Lines, A., Liu, R., Mathaikutty, D., McCoy, S., Paul, A., Tse, J., Venkataramanan, G., . . . Wang, H. (2018) Loihi: A neuromorphic manycore processor with on-chip learning. IEEE Micro, 38(1), 82–99. https://doi.org/10.1109/MM.2018.112130359

Delacour, C., Todri-Sanial, A. (2021) Mapping Hebbian learning rules to coupling resistances for oscillatory neural networks. Frontiers in Neuroscience, 15, 694549. https://doi.org/10.3389/fnins.2021.694549

del Valle, J., Ramírez, J. G., Rozenberg, M. J., Schuller, I. K. (2018) Challenges in materials and devices for resistive-switching-based neuromorphic computing. Journal of Applied Physics, 124(21), 211101. https://doi.org/10.1063/1.5047800

del Valle, J., Ramírez, J. G., Rozenberg, M. J., Schuller, I. K. (2019) Subthreshold firing in Mott nanodevices. Nature, 569, 388–392. https://doi.org/10.1038/s41586-019-1159-6

del Valle, J., Vargas, N. M., Rocco, R., Salev, P., Kalcheim, Y., Lapa, P. N., Adda, C., Lee, M.-H., Wang, P. Y., Fratino, L., Rozenberg, M. J., Schuller, I. K. (2021) Spatiotemporal characterization of the field-induced insulator-to-metal transition. Science, 373(6557), 907–911. https://doi.org/10.1126/science.abd9088

Deng, S., Yu, H., Park, T. J., Islam, A. N. M. N., Manna, S., Pofelski, A., Wang, Q., Zhu, Y., Sankaranarayanan, S. K. R. S., Sengupta, A., Ramanathan, S. (2023) Selective area doping for Mott neuromorphic electronics. Science Advances, 9(11), eade4838. https://doi.org/10.1126/sciadv.ade4838

Gomide, G. B., Carranza-Celis, D., Kuhl, G., Knobel, M., Ramírez, J. G., Muraca, D. (2025) Voltage-tunable spin resonance in quantum phase-separated material. APL Materials, 13(4), 041122. https://doi.org/10.1063/5.0256253

Goodenough, J. B. (1971) The two components of the crystallographic transition in VO2. Journal of Solid State Chemistry, 3(4), 490–500. https://doi.org/10.1016/0022-4596(71)90091-0

Guénon, S., Scharinger, S., Wang, S., Ramírez, J. G., Koelle, D., Kleiner, R., Schuller, I. K. (2013) Electrical breakdown in a V2O3 device at the insulator-to-metal transition. EPL (Europhysics Letters), 101(5), 57003. https://doi.org/10.1209/0295-5075/101/57003

Herculano-Houzel, S. (2009) The human brain in numbers: A linearly scaled-up primate brain. Frontiers in Human Neuroscience, 3, 31. https://doi.org/10.3389/neuro.09.031.2009

Imada, M., Fujimori, A., Tokura, Y. (1998) Metal-insulator transitions. Reviews of Modern Physics, 70(4), 1039–1263. https://doi.org/10.1103/RevModPhys.70.1039

Jiménez, M., Núñez, J., Shamsi, J., Linares-Barranco, B., Avedillo, M. J. (2023) Experimental demonstration of coupled differential oscillator networks for versatile applications. Frontiers in Neuroscience, 17, 1294954. https://doi.org/10.3389/fnins.2023.1294954

Joushaghani, A., Jeong, J., Paradis, S., Alain, D., Aitchison, J. S., Poon, J. K. S. (2014) Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors. Optics Express, 22(3), 3968–3976. https://doi.org/10.1364/OE.22.003968

Kisiel, E., Salev, P., Poudyal, I., Alspaugh, D. J., Carneiro, F., Qiu, E., Rodolakis, F., Zhang, Z., Shpyrko, O. G., Rozenberg, M., Schuller, I. K., Islam, Z., Frano, A. (2025) High-resolution full-field structural microscopy of the voltage-induced filament formation in vo2-based neuromorphic devices. ACS Nano, 19(16), 15385–15394. https://doi.org/10.1021/acsnano.4c14696

Kudithipudi, D., Saleh, Q., Merkel, C., Thesing, J., Wysocki, B. (2016) Design and analysis of a neuromemristive reservoir computing architecture for biosignal processing. Frontiers in Neuroscience, 9, 502. https://doi.org/10.3389/fnins.2015.00502

Kumar, S., Strachan, J. P., Pickett, M. D., Bratkovsky, A., Nishi, Y., Williams, R. S. (2014) Synchronized charge oscillations in correlated electron systems. Scientific Reports, 4, 4964. https://doi.org/10.1038/srep04964

Kunwar, S., Cucciniello, N. P., Mazza, A. R., Zhang, D., Santillan, L., Freiman, B., Roy, P., Jia, Q., MacManus-Driscoll, J. L., Wang, H., Nie, W., Chen, A. (2024) Reconfigurable resistive switching in VO2/La0.7Sr0.3MnO3/Al2O3 (0001) memristive devices for neuromorphic computing. ACS Applied Materials & Interfaces, 16(15), 19103–19111. https://doi.org/10.1021/acsami.3c19032

Laad, M. S., Craco, L. (2024) Mott transitions: A brief review. Advanced Quantum Technologies, 7, 2200186. https://doi.org/10.1002/qute.202200186

Lie, S. (2021) Cerebras CS-2: Architecture and performance of a wafer-scale AI accelerator [2.6 trillion transistors, TSMC 7 nm, system power 23 kW]. IEEE Hot Chips 33 Symposium (HCS). https://doi.org/10.1109/HCS52781.2021.9567183

Liu, Z., Zhang, Q., Xie, D., Zhang, M., Li, X., Zhong, H., Li, G., He, M., Shang, D., Wang, C., Gu, L., Yang, G., Jin, K., Ge, C. (2023) Interface-type tunable oxygen ion dynamics for physical reservoir computing. Nature Communications, 14, 6612. https://doi.org/10.1038/s41467-023-42993-x

McLeod, A. S., van Heumen, E., Ramírez, J. G., Wang, S., Saerbeck, T., Guenon, S., Goldflam, M., Anderegg, L., Kelly, P., Mueller, A., Liu, M. K., Schuller, I. K., Basov, D. N. (2017) Nanotextured phase coexistence in the correlated insulator V2O3. Nature Physics, 13, 80–86. https://doi.org/10.1038/nphys3882

Mead, C. (1989) Analog VLSI and neural systems. Addison-Wesley.

Merolla, P. A., Arthur, J. V., Alvarez-Icaza, R., Cassidy, A. S., Sawada, J., Akopyan, F., Jackson, B. L., Imam, N., Guo, C., Nakamura, Y., Brezzo, B., Vo, I., Esser, S. K., Appuswamy, R., Taba, B., Amir, A., Flickner, M. D., Risk, W. P., Manohar, R., Modha, D. S. (2014) A million spiking-neuron integrated circuit with a scalable communication network and interface. Science, 345(6197), 668–673. https://doi.org/10.1126/science.1254642

Morrison, V. R., Chatelain, R. P., Tiwari, K. L., Hendaoui, A., Bruhács, A., Chaker, M., Siwick, B. J. (2014) A photoinduced metal-like phase of monoclinic VO2 revealed by ultrafast electron diffraction. Science, 346(6208), 445-448. https://doi .org/10.1126/science.1253779

Núñez, J., Avedillo, M. J., Jiménez, M., Quintana, J. M., Todri-Sanial, A., Corti, E., Karg, S., Linares-Barranco, B. (2021) Oscillatory neural networks using VO2 based phase encoded logic. Frontiers in Neuroscience, 15, 655823. https://doi.org/10.3389/fnins.2021.655823

Oh, S., Shi, Y., del Valle, J., Salev, P., Lu, Y., Huang, Z., Kalcheim, Y., Schuller, I. K., Kuzum, D. (2021) Energy-efficient mott activation neuron for full-hardware implementation of neural networks. Nature Nanotechnology, 16(6), 680–687. https://doi.org/10.1038/s41565-021-00874-8

Pickett, M. D., Medeiros-Ribeiro, G., Williams, R. S. (2013) A scalable neuristor built with Mott memristors. Nature Materials, 12(2), 114-117. https://doi.org/10.1038 /nmat3510

Pofelski, A., Liu, C., Reisbick, S. A., Han, M.-G., Wu, L., Navarro, H., Qiu, E., Wang, T. D., Mousavi M., S. S., Alspaugh, D. J., Rozenberg, M., Ramanathan, S., Schuller, I. K., & Zhu, Y. (2026) Switching speed limits in electrically driven vo2 structural mott–peierls transition. Nature Communications, 17, 3139. https://doi.org /10.1038/s41467-026-69904-0

Qazilbash, M. M., Brehm, M., Chae, B. G., Ho, P. C., Andreev, G. O., Kim, B. J., Yun, S. J., Balatsky, A. V., Maple, M. B., Keilmann, F., Kim, H. T., Basov, D. N. (2007) Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging. Science, 318(5857), 1750–1753. https://doi.org/10.1126/science.1150124

Qiu, E., Zhang, Y.-H., Ventra, M. D., Schuller, I. K. (2023) Reconfigurable cascaded thermal neuristors for neuromorphic computing. Advanced Materials, 36(6), 2306818. https ://doi.org/10.1002/adma.202306818

Ramírez, J. G., Sharoni, A., Dubi, Y., Gómez, M. E., Schuller, I. K. (2009) First-order reversal curve measurements of the metal-insulator transition in VO2: Signatures of persistent metallic domains. Physical Review B, 79(23), 235110. https://doi.org/10.1103/PhysRevB.79.235110

Ramírez, J. G. (2026) Experimental deconvolution of electronic and thermal switching mechanisms in the VO2 Metal-Insulator Transition. Revista de la Academia Colombiana de Ciencias Exactas, Físicas y Naturales, 50(194), 54-68. https://doi .org/10.18257/raccefyn.3273

Salev, P., Kisiel, E., Sasaki, D., Gunn, B., He, W., Feng, M., Li, J., Tamura, N., Poudyal, I., Islam, Z., Takamura, Y., Frano, A., Schuller, I. K. (2024) Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by x-ray microscopy. Proceedings of the National Academy of Sciences, 121(34), e2317944121. https://doi.org/10.1073/pnas.2317944121

Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., Eleftheriou, E. (2020) Memory devices and applications for in-memory computing. Nature Nanotechnology, 15(7), 529–544. https://doi.org/10.1038/s41565-020-0655-z

Seoane, L. F. (2019) Evolutionary aspects of reservoir computing. Philosophical Transactions of the Royal Society B, 374, 20180377. https://doi.org/10.1098/rstb.2018.0377

Sharoni, A., Ramírez, J. G., Schuller, I. K. (2008) Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions. Physical Review Letters, 101(2), 026404. https://doi.org/10.1103/PhysRevLett.101.026404

Stoliar, P., Tranchant, J., Corraze, B., Janod, E., Besland, M.-P., Tesler, F., Rozenberg, M., Cario, L. (2017) A leaky-integrate-and-fire neuron analog realized with a Mott insulator. Advanced Functional Materials, 27(11), 1604740. https://doi.org/10.1002/adfm.201604740

Tanaka, G., Yamane, T., Héroux, J. B., Nakane, R., Kanazawa, N., Takeda, S., Numata, H., Nakano, D., Hirose, A. (2019) Recent advances in physical reservoir computing: A review. Neural Networks, 115, 100-123. https://doi.org/10.1016/j.neunet.2019.03.005

Weber, C., O'Regan, D. D., Hine, N. D. M., Payne, M. C., Kotliar, G., & Littlewood, P. B. (2012) Vanadium dioxide: A Peierls-Mott insulator stable against disorder. Physical Review Letters, 108(25), 256402. https://doi.org/10.1103/PhysRevLett.108.256402

Torres, F., Basaran, A. C., Schuller, I. K. (2023) Thermal management in neuromorphic materials, devices, and networks. Advanced Materials, 35(37), 2205098. https://doi.org/10 .1002/adma.202205098

Valmianski, I., Wang, P. Y., Wang, S., Ramírez, J. G., Guénon, S., Schuller, I. K. (2018) Origin of the current-driven breakdown in vanadium oxides: Thermal versus electronic. Physical Review B, 98(19), 195144. https://doi.org/10.1103/PhysRevB.98.195144

Wang, S., Ramírez, J. G., Jeffet, J., Bar-Ad, S., Huppert, D., Schuller, I. K. (2017) Ultrafast photo-induced dynamics across the metal-insulator transition of VO2. EPL (Europhysics Letters), 118, 27005. https://doi.org/10.1209/0295-5075/118/27005

Wang, S., Ramírez, J. G., Schuller, I. K. (2015) Avalanches in vanadium sesquioxide nanodevices. Physical Review B, 92, 085150. https://doi.org/10.1103/PhysRevB.92.085150

Zimmers, A., Aigouy, L., Mortier, M., Sharoni, A., Wang, S., West, K. G., Ramírez, J. G., Schuller, I. K. (2013) Role of thermal heating on the voltage induced insulator-metal transition in VO2. Physical Review Letters, 110(5), 056601. https://doi.org/10.1103/PhysRevLett.110.056601

Creative Commons License

Esta obra está bajo una licencia internacional Creative Commons Atribución-NoComercial-SinDerivadas 4.0.

Derechos de autor 2026 Revista de la Academia Colombiana de Ciencias Exactas, Físicas y Naturales