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Abstract
The use of materials in contemporary technology heavily relies on their nanostructural, physical, and chemical attributes. The specific domain within technology referred to as spintronics, encompasses the realm of spin transport electronics. Spintronics delves into the electron spin, its inherent magnetic moment and fundamental charge, and the manipulation of these intrinsic characteristics to develop solid-state devices. In metallic systems, spintronics encloses phenomena like spin-charge coupling, which includes ferro- and ferrimagnetic materials, giant and colossal magnetoresistive materials, and metallic spins. Among the most versatile materials in the evidence of exotic properties, one of the most representative families is the so-called perovskites, widely studied in recent years including their properties in solar cell technology. Here, we present some crystallographic, compositional, morphological, optical, and magnetic attributes of the Ca2TiFeO6 double perovskite material, synthesized by the standard solid-state reaction method from high-purity precursor oxides. Rietveld refinement of experimental X-ray diffraction data revealed that this material crystallizes in a monoclinic perovskite-type structure with alternating ordering of Ti-Fe cations along the three crystallographic axes. The strongly granular surface character of the Ca2TiFeO6 materials was observed in the images from a scanning electron microscope; the electron X-ray energy dispersive spectra revealed a close match of sample composition to that expected from their chemical formula. The diffuse reflectance spectrum showed the semiconductor feature of the material with a 1.02 eV bandgap. The magnetic characterization in the 50 K < T < 335 K regime and the applied fields up to 1 kOe showed the ferromagnetic response of the material over the entire temperature range measured. These properties are promising in the spintronics industry for devices where the same material serves to process, record, read, and erase information as in the spin transistors.
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