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In this work, we describe two optical characterization techniques, photoluminescence and photoreflectance, and the growth technique liquid phase epitaxy. By means of these techniques, we fulfill the growth and the study of the main physical properties of semiconductor thin films formed by ternary and quaternary alloys. Epitaxial films type p and type n of GaAs and Ga1-xAlxAs, Ge, and Sn doped, had been analyzed at different temperatures, from 10 to 300 K, and different modulator laser power. We also present a morphology study of the GaInAsSb quaternary material, and the process to determine the optimal growth parameters for the epitaxial layers with good crystalline quality.
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References
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